JPH0443416B2 - - Google Patents

Info

Publication number
JPH0443416B2
JPH0443416B2 JP59175861A JP17586184A JPH0443416B2 JP H0443416 B2 JPH0443416 B2 JP H0443416B2 JP 59175861 A JP59175861 A JP 59175861A JP 17586184 A JP17586184 A JP 17586184A JP H0443416 B2 JPH0443416 B2 JP H0443416B2
Authority
JP
Japan
Prior art keywords
strip line
substrate
dielectric
thickness
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59175861A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6154674A (ja
Inventor
Yasumi Hikosaka
Yasutaka Hirachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59175861A priority Critical patent/JPS6154674A/ja
Publication of JPS6154674A publication Critical patent/JPS6154674A/ja
Publication of JPH0443416B2 publication Critical patent/JPH0443416B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Waveguides (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
JP59175861A 1984-08-25 1984-08-25 超高周波集積回路装置 Granted JPS6154674A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59175861A JPS6154674A (ja) 1984-08-25 1984-08-25 超高周波集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59175861A JPS6154674A (ja) 1984-08-25 1984-08-25 超高周波集積回路装置

Publications (2)

Publication Number Publication Date
JPS6154674A JPS6154674A (ja) 1986-03-18
JPH0443416B2 true JPH0443416B2 (en]) 1992-07-16

Family

ID=16003479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59175861A Granted JPS6154674A (ja) 1984-08-25 1984-08-25 超高周波集積回路装置

Country Status (1)

Country Link
JP (1) JPS6154674A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4937660A (en) * 1988-12-21 1990-06-26 At&T Bell Laboratories Silicon-based mounting structure for semiconductor optical devices
JP2500235B2 (ja) * 1991-02-07 1996-05-29 富士通株式会社 薄膜回路基板及びその製造方法
FR3046874B1 (fr) * 2016-01-15 2018-04-13 Soitec Procede de fabrication de structures semi-conductrices incluant une couche a haute resistivite, et structures semi-conductrices apparentees

Also Published As

Publication number Publication date
JPS6154674A (ja) 1986-03-18

Similar Documents

Publication Publication Date Title
US5063177A (en) Method of packaging microwave semiconductor components and integrated circuits
US5770513A (en) Method for producing semiconductor device with heat dissipation structure
JPH01257355A (ja) マイクロ波モノリシックｉｃ
US6169320B1 (en) Spiral-shaped inductor structure for monolithic microwave integrated circuits having air gaps in underlying pedestal
US4692791A (en) Monolithic IMPATT with stripline leads
JP4015746B2 (ja) 半導体装置
JPH0443416B2 (en])
US6884656B2 (en) Semiconductor device having a flip-chip construction
JPH0732257B2 (ja) モノリシック半導体構造
KR20020070739A (ko) 단일 칩 고주파 집적회로 및 그 제조 방법
JPS62211962A (ja) 高周波半導体装置の製造方法
JP2002217194A (ja) 半導体装置
JPS6056306B2 (ja) マイクロ波ｉｃ装置とその製造方法
JP2520584B2 (ja) 半導体装置
JP2800890B2 (ja) マイクロ波回路
JPS62294303A (ja) 半導体装置およびその製造方法
JPS6231133A (ja) 半導体装置
JP2674546B2 (ja) ビームリード型半導体装置の製造方法
JPH03178157A (ja) マイクロ波モノリシック集積回路
JPH047845A (ja) 半導体装置の製造方法
JPS5994818A (ja) 半導体装置の製造方法
JPH11150113A (ja) 半導体装置の製造方法
JP2000223501A (ja) 半導体集積回路装置とその製造方法
JPS6179261A (ja) 半導体装置の製造方法
JPH0786612A (ja) モノリシック半導体デバイス